PESD5V0S1ULD,315【PDF 4/12 页】DIODE ESD PROTECTION SOD-882

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NXP Semiconductors

PESD5V0S1ULD

Unidirectional ESD protection diode

6. Characteristics

Table 8. Characteristics

T amb = 25 ° C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V RWM

reverse standoff voltage

-

-

5.0

V

I RM

V BR

C d

reverse leakage current

breakdown voltage

diode capacitance

V RWM = 5.0 V

I R = 5 mA

f = 1 MHz;

-

6.4

-

0.1

6.8

152

1

7.2

200

μ A

V

pF

V R = 0 V

V CL

clamping voltage

[1][2]

I PP = 1 A

I PP = 15 A

-

-

-

-

9

20

V

V

r dyn

dynamic resistance

I R = 10 A

[2][3]

-

0.3

-

Ω

[1]

[2]

[3]

Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.

Measured from pin 1 to pin 2.

Non-repetitive current pulse; Transmission Line Pulse (TLP) t p = 100 ns; square pulse;

ANSI/ESD STM5.1-2008.

10 4

P PP

(W)

10 3

10 2

006aac483

1.2

P PP

P PP(25 ° C)

0.8

0.4

001aaa633

10

1

10

10 2

t p ( μ s)

10 3

0

0

50

100

150

T j ( ° C)

200

T amb = 25 ° C

Fig 4.

Peak pulse power as a function of exponential

pulse duration; typical values

Fig 5.

Relative variation of peak pulse power as a

function of junction temperature; typical

values

PESD5V0S1ULD

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 19 October 2010

? NXP B.V. 2010. All rights reserved.

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